TY - JOUR
T1 - Transport and magnetic properties of Ce-doped LaMnO 3 thin films
AU - Yanagida, Takeshi
AU - Kanki, Teruo
AU - Vilquin, Bertrand
AU - Tanaka, Hidekazu
AU - Kawai, Tomoji
N1 - Funding Information:
The authors would like to thank the Ministry of Education, Culture, Sports, Science and Technology of Japan for funding and supporting this project through the Center of Excellence (COE) program. Three of the authors (T.Y., T.K. and B.V.) acknowledge the financial support from the Japan Society for the Promotion Science (JSPS).
PY - 2005/5/15
Y1 - 2005/5/15
N2 - Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements.
AB - Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements.
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U2 - 10.1016/j.apsusc.2004.09.145
DO - 10.1016/j.apsusc.2004.09.145
M3 - Conference article
AN - SCOPUS:15844410584
SN - 0169-4332
VL - 244
SP - 355
EP - 358
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
T2 - 12th International Conference on Solid Films and Surfaces
Y2 - 21 June 2004 through 25 June 2004
ER -