Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface

Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抜粋

Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.

元の言語英語
記事番号015202
ジャーナルApplied Physics Express
11
発行部数1
DOI
出版物ステータス出版済み - 1 2018

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Hayashi, S., Visikovskiy, A., Kajiwara, T., Iimori, T., Shirasawa, T., Nakastuji, K., Miyamachi, T., Nakashima, S., Yaji, K., Mase, K., Komori, F., & Tanaka, S. (2018). Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface. Applied Physics Express, 11(1), [015202]. https://doi.org/10.7567/APEX.11.015202