抄録
Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 015202 |
| ジャーナル | Applied Physics Express |
| 巻 | 11 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2018 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface. / Hayashi, Shingo; Visikovskiy, Anton; Kajiwara, Takashi; Iimori, Takushi; Shirasawa, Tetsuroh; Nakastuji, Kan; Miyamachi, Toshio; Nakashima, Shuhei; Yaji, Koichiro; Mase, Kazuhiko; Komori, Fumio; Satoru, Tanaka.
：: Applied Physics Express, 巻 11, 番号 1, 015202, 01.01.2018.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface
AU - Hayashi, Shingo
AU - Visikovskiy, Anton
AU - Kajiwara, Takashi
AU - Iimori, Takushi
AU - Shirasawa, Tetsuroh
AU - Nakastuji, Kan
AU - Miyamachi, Toshio
AU - Nakashima, Shuhei
AU - Yaji, Koichiro
AU - Mase, Kazuhiko
AU - Komori, Fumio
AU - Satoru, Tanaka
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.
AB - Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.
UR - http://www.scopus.com/inward/record.url?scp=85040013884&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85040013884&partnerID=8YFLogxK
U2 - 10.7567/APEX.11.015202
DO - 10.7567/APEX.11.015202
M3 - Article
AN - SCOPUS:85040013884
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 1
M1 - 015202
ER -