Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface

Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)


Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.

ジャーナルApplied Physics Express
出版ステータス出版済み - 1月 2018

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)


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