Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface

Shingo Hayashi; Anton Visikovskiy; Takashi Kajiwara; Takushi Iimori; Tetsuroh Shirasawa; Kan Nakastuji; Toshio Miyamachi; Shuhei Nakashima; Koichiro Yaji; Kazuhiko Mase; Fumio Komori; Satoru Tanaka

doi:10.7567/APEX.11.015202

Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface

Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka

応用物理学

研究成果: ジャーナルへの寄稿 › 記事

7 引用（Scopus）

抜粋

Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.

元の言語	英語
記事番号	015202
ジャーナル	Applied Physics Express
巻	11
発行部数	1
DOI	https://doi.org/10.7567/APEX.11.015202
出版物ステータス	出版済み - 1 2018

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/APEX.11.015202

フィンガープリント Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Hayashi, S., Visikovskiy, A., Kajiwara, T., Iimori, T., Shirasawa, T., Nakastuji, K., Miyamachi, T., Nakashima, S., Yaji, K., Mase, K., Komori, F., & Tanaka, S. (2018). Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface. Applied Physics Express, 11(1), [015202]. https://doi.org/10.7567/APEX.11.015202

Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface. / Hayashi, Shingo; Visikovskiy, Anton; Kajiwara, Takashi; Iimori, Takushi; Shirasawa, Tetsuroh; Nakastuji, Kan; Miyamachi, Toshio; Nakashima, Shuhei; Yaji, Koichiro; Mase, Kazuhiko; Komori, Fumio; Tanaka, Satoru.

：: Applied Physics Express, 巻 11, 番号 1, 015202, 01.2018.

研究成果: ジャーナルへの寄稿 › 記事

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abstract = "Sn atomic layers attract considerable interest owing to their spin-related physical properties caused by their strong spin-orbit interactions. We performed Sn intercalation into the graphene/SiC(0001) interface and found a new type of Sn atomic layer. Sn atoms occupy on-top sites of Si-terminated SiC(0001) with in-plane Sn-Sn bondings, resulting in a triangular lattice. Angle-resolved photoemission spectroscopy revealed characteristic dispersions at and points, which agreed well with density functional theory calculations. The Sn triangular lattice atomic layer at the interface showed no oxidation upon exposure to air, which is useful for characterization and device fabrication ex situ.",

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AU - Shirasawa, Tetsuroh

AU - Nakastuji, Kan

AU - Miyamachi, Toshio

AU - Nakashima, Shuhei

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AU - Mase, Kazuhiko

AU - Komori, Fumio

AU - Tanaka, Satoru

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