Tribological behavior of metal CMP and detection of process abnormality

Yohei Yamada, Masanori Kawakubo, Osamu Hirai, Nobuhiro Konishi, Syuhei Kurokawa, Toshiro Doi

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

We examined a real-time coefficient of friction (COF) monitoring to evaluate the correlation between the pad surface response during polishing and material removal rate for metal chemical-mechanical polishing (CMP) applications. The results showed that a correlation of the removal rate and COF in tungsten (W) CMP was contrary to that in copper (Cu) CMP. Polishing by-products generated during CMP affects the friction force between the probing tip and the pad surface. The balance between the chemical and mechanical factors indicates the different frictional behavior between W CMP and Cu CMP. Furthermore, we detected the failures in the CMP process, which extracts an out-of-range deviation of the continuously monitored COF in product wafers, and reveal them in tantalum CMP. These results demonstrated the usefulness of an in situ CMP process monitor.

本文言語英語
ページ(範囲)H569-H574
ジャーナルJournal of the Electrochemical Society
155
8
DOI
出版ステータス出版済み - 7 11 2008

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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