TY - JOUR
T1 - Triple-walled gold surfaces with small-gaps for nonresonance surface enhanced Raman scattering of rhodamine 6G molecules
AU - Baba, Tatsuya
AU - Lee, Yaerim
AU - Ueno, Ai
AU - Kometani, Reo
AU - Maeda, Etsuo
AU - Takigawa, Ryo
N1 - Publisher Copyright:
© 2015 American Vacuum Society.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - To increase the intensity of Raman scattering with surface enhanced Raman scattering (SERS) effect, the authors proposed the triple-walled gold (Au) structures on silicon (Si) substrate. High aspect ratio Au nanowalls with nanogaps were realized by two different techniques. One is layer by layer technique. The other is standing high aspect ratio Au wall fabrication technique. Finally, 50 nm-thick Au standing walls and 50 nm gaps were obtained. Through the comparison of bare Si substrate, Au film, single-walled Au structures, and triple-walled Au structures in SERS intensity with 0.020 wt. % rhodamine 6G molecules, it was revealed that the SERS intensity from triple-walled Au structure was 50 times higher than that from Au film. The enhancement factor (EF) of our proposed SERS chip was estimated as 4.7 × 106. The proposed method will allow us to realize multiwalled Au structure, which can increase EF efficiently.
AB - To increase the intensity of Raman scattering with surface enhanced Raman scattering (SERS) effect, the authors proposed the triple-walled gold (Au) structures on silicon (Si) substrate. High aspect ratio Au nanowalls with nanogaps were realized by two different techniques. One is layer by layer technique. The other is standing high aspect ratio Au wall fabrication technique. Finally, 50 nm-thick Au standing walls and 50 nm gaps were obtained. Through the comparison of bare Si substrate, Au film, single-walled Au structures, and triple-walled Au structures in SERS intensity with 0.020 wt. % rhodamine 6G molecules, it was revealed that the SERS intensity from triple-walled Au structure was 50 times higher than that from Au film. The enhancement factor (EF) of our proposed SERS chip was estimated as 4.7 × 106. The proposed method will allow us to realize multiwalled Au structure, which can increase EF efficiently.
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U2 - 10.1116/1.4938483
DO - 10.1116/1.4938483
M3 - Article
AN - SCOPUS:84953272120
SN - 2166-2746
VL - 34
JO - Journal of Vacuum Science and Technology B
JF - Journal of Vacuum Science and Technology B
IS - 1
M1 - 011802
ER -