Tritium behavior on SiC

Kazunari Katayama, Masabumi Nishikawa, Toshiharu Takeishi

研究成果: 会議への寄与タイプ論文

抄録

SiC (silicon carbide) has been considered as one of the primary candidate materials for a first wall component in a future fusion reactor because it has been claimed that SiC has excellent high temperature properties and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, tritium trapping capacity on the surface of SiC is experimentally obtained as about 1010 Bq/m2 at the temperature range of 298 K-1073 K in consideration of the static system effect. It is also observed that tritium is trapped to the surface through hydrogen isotope exchange reaction. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface is quantified at the temperature of 298 K, 773 K, 973 K in consideration of the kinetic system effect by the numerical curve fitting method applying the serial reactor model. The reaction rate is observed to be constant as 3.48 × 10-5m/s. The comparison of tritium properties of SiC with that of graphite or stainless steel is also discussed.

元の言語英語
ページ164-167
ページ数4
出版物ステータス出版済み - 1 1 2002
イベント19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE) - Atlantic City, NJ, 米国
継続期間: 1 22 20021 25 2002

その他

その他19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE)
米国
Atlantic City, NJ
期間1/22/021/25/02

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Tritium
tritium
Silicon carbide
silicon carbides
Reaction rates
Isotopes
reaction kinetics
High temperature properties
Hydrogen
hydrogen isotopes
fusion reactors
Fusion reactors
curve fitting
Curve fitting
stainless steels
Graphite
Stainless steel
graphite
isotopes
Chemical activation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

これを引用

Katayama, K., Nishikawa, M., & Takeishi, T. (2002). Tritium behavior on SiC. 164-167. 論文発表場所 19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE), Atlantic City, NJ, 米国.

Tritium behavior on SiC. / Katayama, Kazunari; Nishikawa, Masabumi; Takeishi, Toshiharu.

2002. 164-167 論文発表場所 19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE), Atlantic City, NJ, 米国.

研究成果: 会議への寄与タイプ論文

Katayama, K, Nishikawa, M & Takeishi, T 2002, 'Tritium behavior on SiC', 論文発表場所 19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE), Atlantic City, NJ, 米国, 1/22/02 - 1/25/02 pp. 164-167.
Katayama K, Nishikawa M, Takeishi T. Tritium behavior on SiC. 2002. 論文発表場所 19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE), Atlantic City, NJ, 米国.
Katayama, Kazunari ; Nishikawa, Masabumi ; Takeishi, Toshiharu. / Tritium behavior on SiC. 論文発表場所 19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE), Atlantic City, NJ, 米国.4 p.
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