T4 site adsorption of Tl atoms in a Si(111)-(1 × 1)-Tl structure, determined by low-energy electron diffraction analysis

Takayuki Noda, Seigi Mizuno, Jinwook Chung, Hiroshi Tochihara

研究成果: ジャーナルへの寄稿レター査読

42 被引用数 (Scopus)

抄録

A (1 × 1) structure formed on Si(111)7 × 7 by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the (1 × 1) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.

本文言語英語
ページ(範囲)L319-L321
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
3 B
DOI
出版ステータス出版済み - 3月 15 2003
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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