A (1 × 1) structure formed on Si(111)7 × 7 by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the (1 × 1) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 3月 15 2003|
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