Tunable spin-orbit interaction in trilayer graphene exemplified in electric-double-layer transistors

Zhuoyu Chen, Hongtao Yuan, Yanfeng Zhang, Kentaro Nomura, Teng Gao, Yabo Gao, Hidekazu Shimotani, Zhongfan Liu, Yoshihiro Iwasa

研究成果: ジャーナルへの寄稿学術誌査読

18 被引用数 (Scopus)

抄録

Taking advantage of ultrahigh electric field generated in electric-double-layer transistors (EDLTs), we investigated spin-orbit interaction (SOI) and its modulation in epitaxial trilayer graphene. It was found in magnetotransport that the dephasing length L φ and spin relaxation length L so of carriers can be effectively modulated with gate bias. As a direct result, SOI-induced weak antilocalization (WAL), together with a crossover from WAL to weak localization (WL), was observed at near-zero magnetic field. Interestingly, among existing localization models, only the Iordanskii-Lyanda-Geller-Pikus theory can successfully reproduce the obtained magnetoconductance well, serving as evidence for gate tuning of the weak but distinct SOI in graphene. Realization of SOI and its large tunability in the trilayer graphene EDLTs provides us with a possibility to electrically manipulate spin precession in graphene systems without ferromagnetics.

本文言語英語
ページ(範囲)2212-2216
ページ数5
ジャーナルNano Letters
12
5
DOI
出版ステータス出版済み - 5月 9 2012
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学

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