TY - JOUR
T1 - Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices
AU - Luo, Peng
AU - Madathil, Sankara Narayanan Ekkanath
AU - Nishizawa, Shin Ichi
AU - Saito, Wataru
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2021/3
Y1 - 2021/3
N2 - Turn-off dV/dt controllability is an essential feature in insulated gate bipolar transistors (IGBTs) for flexible design in power switching applications. However, the occurrence of dynamic avalanche (DA) during the turn-off transients plays a key role on the turn-off power loss, dV/dt controllability and safe operating area of IGBTs. This article aims to clarify the impact of DA on the turn-off characteristics of 1.2-kV trench IGBTs through three-dimensional technology computer aided design (TCAD) simulations as well as experimental demonstrations. Measurement results show that DA is enhanced at high current density and high supply voltage conditions, which aggravates its influence on the dV/dt controllability as well as turn-off power loss. To eliminate the DA for high current density and low loss operations, a DA free design is experimentally demonstrated in the Trench Clustered IGBT (TCIGBT). Due to effective management of electric field and unique p-channel metal oxide semiconductor (PMOS) actions during turn-off, TCIGBT can retain high dV/dt controllability and low power loss at high current density operations.
AB - Turn-off dV/dt controllability is an essential feature in insulated gate bipolar transistors (IGBTs) for flexible design in power switching applications. However, the occurrence of dynamic avalanche (DA) during the turn-off transients plays a key role on the turn-off power loss, dV/dt controllability and safe operating area of IGBTs. This article aims to clarify the impact of DA on the turn-off characteristics of 1.2-kV trench IGBTs through three-dimensional technology computer aided design (TCAD) simulations as well as experimental demonstrations. Measurement results show that DA is enhanced at high current density and high supply voltage conditions, which aggravates its influence on the dV/dt controllability as well as turn-off power loss. To eliminate the DA for high current density and low loss operations, a DA free design is experimentally demonstrated in the Trench Clustered IGBT (TCIGBT). Due to effective management of electric field and unique p-channel metal oxide semiconductor (PMOS) actions during turn-off, TCIGBT can retain high dV/dt controllability and low power loss at high current density operations.
UR - http://www.scopus.com/inward/record.url?scp=85095720117&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85095720117&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2020.3014560
DO - 10.1109/TPEL.2020.3014560
M3 - Article
AN - SCOPUS:85095720117
VL - 36
SP - 3304
EP - 3311
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 3
M1 - 9159936
ER -