Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Turn-off dV/dt controllability is an essential feature in insulated gate bipolar transistors (IGBTs) for flexible design in power switching applications. However, the occurrence of dynamic avalanche (DA) during the turn-off transients plays a key role on the turn-off power loss, dV/dt controllability and safe operating area of IGBTs. This article aims to clarify the impact of DA on the turn-off characteristics of 1.2-kV trench IGBTs through three-dimensional technology computer aided design (TCAD) simulations as well as experimental demonstrations. Measurement results show that DA is enhanced at high current density and high supply voltage conditions, which aggravates its influence on the dV/dt controllability as well as turn-off power loss. To eliminate the DA for high current density and low loss operations, a DA free design is experimentally demonstrated in the Trench Clustered IGBT (TCIGBT). Due to effective management of electric field and unique p-channel metal oxide semiconductor (PMOS) actions during turn-off, TCIGBT can retain high dV/dt controllability and low power loss at high current density operations.

本文言語英語
論文番号9159936
ページ(範囲)3304-3311
ページ数8
ジャーナルIEEE Transactions on Power Electronics
36
3
DOI
出版ステータス出版済み - 3 2021

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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