Two dimensional simulations of triode VHF SiH 4 plasma

Li Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Two-dimensional simulations of a triode VHF SiH 4 plasma (60 MHz) were performed using a fluid model, where the plasma was realized using multirod electrodes. Higher-order silanes that are responsible for the quality of amorphous silicon were included in the simulations. A typical VHF plasma with an electron density higher than 10 16 m %3 and an electron temperature lower than 3 eV was predicted between discharge electrodes while the electron density near the substrate was very low. The SiH 3 density was fairly uniform between discharge electrodes and did not decrease rapidly near the substrate, suggesting a high-speed deposition. Higher-order molecules and radicals that play an important role in dust formation had similar spatial profiles and their densities were five to 6 orders of magnitude lower than the SiH 3 density. We discussed the effect of the rate constant of reaction, SiH 3 + SiH 3 G SiH 2 + SiH 4 , on the SiH 3 density.

本文言語英語
論文番号06JG01
ジャーナルJapanese Journal of Applied Physics
57
6
DOI
出版ステータス出版済み - 6 1 2018

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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