TY - JOUR
T1 - Two types of moisture effects on the receptor function of neat tin oxide gas sensor to oxygen
AU - Yamazoe, Noboru
AU - Suematsu, Koichi
AU - Shimanoe, Kengo
PY - 2013
Y1 - 2013
N2 - Influences of moisture on the response of a neat tin oxide gas sensor to oxygen at 623 K were investigated. Two types of moisture effects were easily recognized, that is, moisture acted as a inhibitor to the oxygen adsorption in form of O- (type I sites) and O2- (type II sites) by being adsorbed competitively (short term effect), whereas the moisture admitted at elevated temperature acted as a promoter to increase the population of type II sites or the adsorptive strength of type I sites (long term effect). A tremendous increase of the type II site population as well as the existence of threshold pressure for oxygen adsorption on the same sites suggests the formation of a sort of surface hydrate, dehydration of which seems to leave type II sites behind. The response to oxygen could be reproduced satisfactorily by using adsorption constants of oxygen and water, threshold pressure of oxygen and semiconductor properties of tin oxide.
AB - Influences of moisture on the response of a neat tin oxide gas sensor to oxygen at 623 K were investigated. Two types of moisture effects were easily recognized, that is, moisture acted as a inhibitor to the oxygen adsorption in form of O- (type I sites) and O2- (type II sites) by being adsorbed competitively (short term effect), whereas the moisture admitted at elevated temperature acted as a promoter to increase the population of type II sites or the adsorptive strength of type I sites (long term effect). A tremendous increase of the type II site population as well as the existence of threshold pressure for oxygen adsorption on the same sites suggests the formation of a sort of surface hydrate, dehydration of which seems to leave type II sites behind. The response to oxygen could be reproduced satisfactorily by using adsorption constants of oxygen and water, threshold pressure of oxygen and semiconductor properties of tin oxide.
UR - http://www.scopus.com/inward/record.url?scp=84875459853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875459853&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2012.08.060
DO - 10.1016/j.snb.2012.08.060
M3 - Article
AN - SCOPUS:84875459853
VL - 176
SP - 443
EP - 452
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
ER -