抄録
A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al 2 O 3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 251101 |
| ジャーナル | Applied Physics Letters |
| 巻 | 109 |
| 発行部数 | 25 |
| DOI | |
| 出版物ステータス | 出版済み - 12 19 2016 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Ultra-fine metal gate operated graphene optical intensity modulator. / Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji.
：: Applied Physics Letters, 巻 109, 番号 25, 251101, 19.12.2016.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Ultra-fine metal gate operated graphene optical intensity modulator
AU - Kou, Rai
AU - Hori, Yosuke
AU - Tsuchizawa, Tai
AU - Warabi, Kaori
AU - Kobayashi, Yuzuki
AU - Harada, Yuichi
AU - Hibino, Hiroki
AU - Yamamoto, Tsuyoshi
AU - Nakajima, Hirochika
AU - Yamada, Koji
PY - 2016/12/19
Y1 - 2016/12/19
N2 - A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al 2 O 3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
AB - A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al 2 O 3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.
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U2 - 10.1063/1.4972306
DO - 10.1063/1.4972306
M3 - Article
AN - SCOPUS:85006868957
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251101
ER -