Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song, Parsian K. Mohseni, Seung Hyun Kim, Jae Cheol Shin, Tatsumi Ishihara, Ilesanmi Adesida, Xiuling Li

    研究成果: Contribution to journalArticle査読

    20 被引用数 (Scopus)

    抄録

    Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).

    本文言語英語
    論文番号7485851
    ページ(範囲)970-973
    ページ数4
    ジャーナルIEEE Electron Device Letters
    37
    8
    DOI
    出版ステータス出版済み - 8 2016

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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