Ultra-high electron emission efficiency from defect controled polyimide tunnel cathode

Akiyoshi Baba, Tomoya Yoshida, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

The increase in the ultra-high efficiency field electron emission from the defect-control polyimide tunnel cathode using a dc-voltage 'forming' method was described. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition were important to obtain ultra-high electron emission efficiency from the cathode. The dc-voltage of 50 V was applied between the cathode and the gate electrode until an anode current can be obtained. The results indicates that hot electrons generated in the ion modified polyimide film emit the vacuum with less scattering.

本文言語英語
ホスト出版物のタイトルTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
編集者A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
ページ104-105
ページ数2
出版ステータス出版済み - 2004
外部発表はい
イベントTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, 米国
継続期間: 7 11 20047 16 2004

その他

その他Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
国/地域米国
CityCambridge, MA
Period7/11/047/16/04

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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