Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

R. Matsumura, K. Moto, Y. Kai, T. Sadoh, H. Ikenoue, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.

本文言語英語
ホスト出版物のタイトルSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
編集者S. Kar, D. Misra, K. Kita, D. Landheer
出版社Electrochemical Society Inc.
ページ301-304
ページ数4
5
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 1 1 2015
イベントSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, 米国
継続期間: 10 11 201510 15 2015

出版物シリーズ

名前ECS Transactions
番号5
69
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
Country米国
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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