To develop a technique for TEM examination of wire-bonded interfaces, which is important to solve problems in the IC industry, thin films with intermetallic interfaces were prepared by an ultramicrotome technique. There is no amorphous phase in these films, whereas in the films prepared by ion milling, the interface has become amorphous. From this result, a suitable TEM microscopic technique to prepare films of wire-bonded interface is discussed.
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