Ultrasonic bonding of cone bump for integration of large-scale integrated circuits in flexible electronics

Takanori Shuto, Keiichiro Iwanabe, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

This paper reports that room-temperature bonding of LSI chips to metalization on a plastic film made of poly(ethylene naphthalate) (PEN) can be realized by ultrasonic bonding of a cone-shaped microbump made of Au. A 20-m-pitch area array of cone-shaped Au microbumps was fabricated on a Si wafer by photolithography and electroplating. The counter electrode on the PEN film was composed of a Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by electroless plating on Al interconnection. Bonding of 8,800 bump connections with 83.4m/bump has been achieved at room temperature.

本文言語英語
論文番号05DB10
ジャーナルJapanese journal of applied physics
52
5 PART 2
DOI
出版ステータス出版済み - 5 2013

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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