Ultrathin adhesive layer between LiNbO3 and SiO2 for bonded LNOI waveguide applications

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

抄録

A RT wafer bonding method for waveguide applications was investigated using an ultrathin Fe intermediate adhesive layer between LiNbO3 (LN) and SiO2 wafers. Here we focus on the optimal amounts of Fe in this layer to minimize the propagation losses of the resultant LN on-insulator (LNOI) waveguide. A sub-nanometer-thick Fe-containing intermediate layer exhibited strong bonding strength (surface energy: >1 J m-2) at RT, which may be sufficient for device applications. The influence of the Fe intermediate layer on the propagation loss of light through the LNOI waveguide was also investigated using numerical calculations. The present study is expected to be a significant contribution to the development of fabrication techniques for waveguides composed of various materials to be bonded by this RT bonding method using a metal intermediate adhesive layer.

元の言語英語
記事番号SJJE06
ジャーナルJapanese Journal of Applied Physics
58
発行部数SJ
DOI
出版物ステータス出版済み - 1 1 2019

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adhesives
Adhesives
Waveguides
insulators
waveguides
Wafer bonding
wafers
Interfacial energy
propagation
surface energy
Fabrication
Metals
fabrication
metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Ultrathin adhesive layer between LiNbO3 and SiO2 for bonded LNOI waveguide applications. / Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 58, 番号 SJ, SJJE06, 01.01.2019.

研究成果: ジャーナルへの寄稿記事

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