Zinc Oxide (ZnO) thin films have been deposited on silicon (100), quartz glass, sapphire (0001), and glass substrates by pulsed laser deposition over a range of process conditions such as versus ambient oxygen gas pressure and substrate temperature. Photoluminescence measurements have been carried out to characterize ZnO thin films for optical device applications. We have also studied the influence of the process conditions on crystal structure and morphology of the grown films. Ultraviolet luminescence near the band gap 3.25 eV was obtained from the optical pumped grown films. And ZnO thin films deposited on sapphire single crystal substrates exhibited strong stimulated emission around 3.12 eV with increasing pumping energy. ZnO thin films deposited at ambient oxygen gas pressure of 5 mTorr and a substrate temperature of 550°C were predominantly c-axis oriented regardless of substrate material. The crystallite size of 22.7 - 49.8 nm was estimated using Scherrer's formula. AFM images of films grown on sapphire substrates display hexagonally shaped grains at various sizes.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||出版済み - 2002|
|イベント||Functional Nanostructured Materials through Multiscale Assembly and Novel Pattering Techniques - San Francisco, CA, 米国|
継続期間: 4 2 2002 → 4 5 2002
All Science Journal Classification (ASJC) codes