Unconventional carrier generation mechanism at ferroelectric phase transitions

D. Matsumoto, S. Kaku, K. Nakamura, Y. Watanabe

研究成果: ジャーナルへの寄稿学術誌査読

抄録

By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

本文言語英語
ページ(範囲)29-34
ページ数6
ジャーナルFerroelectrics
400
1
DOI
出版ステータス出版済み - 2010

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Unconventional carrier generation mechanism at ferroelectric phase transitions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル