Underlayer selection to improve the performance of polycrystalline Ge thin film transistors

Toshifumi Imajo, Kenta Moto, Keisuke Yamamoto, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

We fabricated accumulation-mode metal source/drain p-channel thin film transistors using solid-phase crystallized Ge with different thickness formed on glass substrate. By thinning the Ge layer with the largest grain size (3.7 μm), the channel region got fully-depleted, and the TFT exhibited both high on/off current ratio (~102) and field effect mobility (170 cm2 V-1 s-1). We prepared interfacial layers (GeO2 and Al2O3) between Ge and the substrate to achieve a high Hall hole mobility with a thin film, which is the key for improving TFT characteristics. As a result, inserting Al2O3 underlayer improved the electrical properties of thin Ge (50 nm) layers.

本文言語英語
ホスト出版物のタイトルPRiME 2020
ホスト出版物のサブタイトルSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
編集者Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
出版社IOP Publishing Ltd.
ページ423-427
ページ数5
5
ISBN(電子版)9781607689003
DOI
出版ステータス出版済み - 2020
イベントPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, 米国
継続期間: 10 4 202010 9 2020

出版物シリーズ

名前ECS Transactions
番号5
98
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

会議

会議Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
国/地域米国
CityHonolulu
Period10/4/2010/9/20

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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