Understanding of Fermi level pinning at metal/germanium interface based on semiconductor structure

Xuan Luo, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

We discuss the dominant mechanism of strong Fermi-level pinning (FLP) at common element metal/germanium (Ge) interfaces focusing on electronic and bonding structure of semiconductor side. Although epitaxially grown silicon-germanium (SiGe) substrates have many dislocations and defects as well as a natural disorder of atomic bonding structure, the FLP at metal/SiGe interface is much weaker than that at the metal/Ge interface. Additionally, metal/Ge interface with amorphous Ge layer exhibits a significant shift of pinning level. These results consistently support that the strong FLP at common element metal/Ge interface is dominantly caused by intrinsic FLP mechanism like metal-induced gap states.

本文言語英語
論文番号031003
ジャーナルApplied Physics Express
13
3
DOI
出版ステータス出版済み - 3 1 2020
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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