Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.

元の言語英語
記事番号223503
ジャーナルApplied Physics Letters
103
発行部数22
DOI
出版物ステータス出版済み - 11 25 2013
外部発表Yes

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graphene
field effect transistors
annealing
vacuum

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. / Nagahisa, Yuichi; Harada, Yuichi; Tokumitsu, Eisuke.

:: Applied Physics Letters, 巻 103, 番号 22, 223503, 25.11.2013.

研究成果: ジャーナルへの寄稿記事

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