Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa; Yuichi Harada; Eisuke Tokumitsu

doi:10.1063/1.4833755

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

4 被引用数 (Scopus)

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To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H₂. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 10³.

本文言語	英語
論文番号	223503
ジャーナル	Applied Physics Letters
巻	103
号	22
DOI	https://doi.org/10.1063/1.4833755
出版ステータス	出版済み - 11月 25 2013
外部発表	はい

All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.4833755

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title = "Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions",

abstract = "To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.",

author = "Yuichi Nagahisa and Yuichi Harada and Eisuke Tokumitsu",

note = "Funding Information: This work was partly supported by a Grant-in Aid from the Japan Society for the Promotion of Science (JSPS) Fellows, the Grant No. 24·9115, and by the joint NTT research program. This work was also supported in part by a Grant-in-Aid for Exploratory Research from JSPS. We would like to express our thanks to Associate Professor Tetsuji Yano of Tokyo Institute of Technology for XPS measurements. ",

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AU - Harada, Yuichi

AU - Tokumitsu, Eisuke

N1 - Funding Information: This work was partly supported by a Grant-in Aid from the Japan Society for the Promotion of Science (JSPS) Fellows, the Grant No. 24·9115, and by the joint NTT research program. This work was also supported in part by a Grant-in-Aid for Exploratory Research from JSPS. We would like to express our thanks to Associate Professor Tetsuji Yano of Tokyo Institute of Technology for XPS measurements.

PY - 2013/11/25

Y1 - 2013/11/25

N2 - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.

AB - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.

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Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

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