抄録
To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 223503 |
| ジャーナル | Applied Physics Letters |
| 巻 | 103 |
| 発行部数 | 22 |
| DOI | |
| 出版物ステータス | 出版済み - 11 25 2013 |
| 外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. / Nagahisa, Yuichi; Harada, Yuichi; Tokumitsu, Eisuke.
：: Applied Physics Letters, 巻 103, 番号 22, 223503, 25.11.2013.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions
AU - Nagahisa, Yuichi
AU - Harada, Yuichi
AU - Tokumitsu, Eisuke
PY - 2013/11/25
Y1 - 2013/11/25
N2 - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.
AB - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.
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U2 - 10.1063/1.4833755
DO - 10.1063/1.4833755
M3 - Article
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 223503
ER -