Use of an inhomogeneous magnetic field for silicon crystal growth

Koichi Kakimoto, M. Eguchi, H. Ozoe

研究成果: ジャーナルへの寄稿記事

31 引用 (Scopus)

抄録

The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.

元の言語英語
ページ(範囲)442-449
ページ数8
ジャーナルJournal of Crystal Growth
180
発行部数3-4
DOI
出版物ステータス出版済み - 1 1 1997

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Silicon
Crystallization
Crystal growth
crystal growth
Magnetic fields
Oxygen
silicon
oxygen
cusps
magnetic fields
Crystals
parallel flow
Parallel flow
crystals
Flow of fluids
low concentrations
Lorentz force
flow visualization
Computer simulation
liquid-solid interfaces

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Use of an inhomogeneous magnetic field for silicon crystal growth. / Kakimoto, Koichi; Eguchi, M.; Ozoe, H.

:: Journal of Crystal Growth, 巻 180, 番号 3-4, 01.01.1997, p. 442-449.

研究成果: ジャーナルへの寄稿記事

Kakimoto, Koichi ; Eguchi, M. ; Ozoe, H. / Use of an inhomogeneous magnetic field for silicon crystal growth. :: Journal of Crystal Growth. 1997 ; 巻 180, 番号 3-4. pp. 442-449.
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