TY - JOUR
T1 - Using a tritium imaging plate technique to measure the hydrogen solubility and diffusivity of Zr-doped BaInO2.5
AU - Hashizume, Kenichi
AU - Oki, Yusaku
N1 - Funding Information:
This work was supported by the Japan Atomic Energy Agency under Joint Work contract #24K389 as a part of the Broader Approach activities.
PY - 2017/4
Y1 - 2017/4
N2 - A tritium imaging plate technique (TIPT) was used to measure the hydrogen solubility and diffusivity of a proton-conducting material, Zr-doped BaInO2.5. After being exposured to tritiated water vapor, the specimen was cut into halves and photo-stimulated luminescence (PSL) images of the crosssection of the cut specimen were obtained. Based on the PSL distribution profiles and intensities, hydrogen diffusivity and solubility in the specimens were determined. The hydrogen solubility and diffusivity in Zrdoped BaInO2.5 clearly depended on the content of Zr. This characteristic of the Zr content is in agreement with the Zr-content dependency of its proton conductivity, which was measured by an alternating current (AC) impedance method.
AB - A tritium imaging plate technique (TIPT) was used to measure the hydrogen solubility and diffusivity of a proton-conducting material, Zr-doped BaInO2.5. After being exposured to tritiated water vapor, the specimen was cut into halves and photo-stimulated luminescence (PSL) images of the crosssection of the cut specimen were obtained. Based on the PSL distribution profiles and intensities, hydrogen diffusivity and solubility in the specimens were determined. The hydrogen solubility and diffusivity in Zrdoped BaInO2.5 clearly depended on the content of Zr. This characteristic of the Zr content is in agreement with the Zr-content dependency of its proton conductivity, which was measured by an alternating current (AC) impedance method.
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U2 - 10.1080/15361055.2017.1291036
DO - 10.1080/15361055.2017.1291036
M3 - Article
AN - SCOPUS:85045149267
SN - 1536-1055
VL - 71
SP - 344
EP - 350
JO - Fusion Science and Technology
JF - Fusion Science and Technology
IS - 3
ER -