抄録
Single wall carbon nanotube (SWCNT) is considered as an ideal candidate for next-generation nanoelectronics owing to its unusual properties. Here we have performed an in-depth theoretical analysis of the effect of vacancy defects and curvature on the phonon properties of (10; 0)and (10; 10)SWCNTs using the forced vibrational method. We report that Raman active E2g mode softens towards the low-frequency region with increasing vacancies and curvature in both types of CNTs. Vacancy induces some new peaks at low-frequency region of the phonon density of states. Phonon localization properties are also manifested. Our calculated mode pattern and localization length show that optical phonon at Raman D-band frequency is strongly localized in vacancy defected and large curved CNTs. Our findings will be helpful in explaining the thermal conductivity, specific heat capacity, and Raman spectra in vacancy type disordered CNTs, as well as electron transport properties of CNT-based nanoelectronic devices.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 02CB08 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 57 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | 出版済み - 2 2018 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Vacancy and curvature effects on the phonon properties of single wall carbon nanotube. / Howlader, Ashraful Hossain; Islam, Md Sherajul; Tanaka, Satoru; Makino, Takayuki; Hashimoto, Akihiro.
：: Japanese Journal of Applied Physics, 巻 57, 番号 2, 02CB08, 02.2018.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Vacancy and curvature effects on the phonon properties of single wall carbon nanotube
AU - Howlader, Ashraful Hossain
AU - Islam, Md Sherajul
AU - Tanaka, Satoru
AU - Makino, Takayuki
AU - Hashimoto, Akihiro
PY - 2018/2
Y1 - 2018/2
N2 - Single wall carbon nanotube (SWCNT) is considered as an ideal candidate for next-generation nanoelectronics owing to its unusual properties. Here we have performed an in-depth theoretical analysis of the effect of vacancy defects and curvature on the phonon properties of (10; 0)and (10; 10)SWCNTs using the forced vibrational method. We report that Raman active E2g mode softens towards the low-frequency region with increasing vacancies and curvature in both types of CNTs. Vacancy induces some new peaks at low-frequency region of the phonon density of states. Phonon localization properties are also manifested. Our calculated mode pattern and localization length show that optical phonon at Raman D-band frequency is strongly localized in vacancy defected and large curved CNTs. Our findings will be helpful in explaining the thermal conductivity, specific heat capacity, and Raman spectra in vacancy type disordered CNTs, as well as electron transport properties of CNT-based nanoelectronic devices.
AB - Single wall carbon nanotube (SWCNT) is considered as an ideal candidate for next-generation nanoelectronics owing to its unusual properties. Here we have performed an in-depth theoretical analysis of the effect of vacancy defects and curvature on the phonon properties of (10; 0)and (10; 10)SWCNTs using the forced vibrational method. We report that Raman active E2g mode softens towards the low-frequency region with increasing vacancies and curvature in both types of CNTs. Vacancy induces some new peaks at low-frequency region of the phonon density of states. Phonon localization properties are also manifested. Our calculated mode pattern and localization length show that optical phonon at Raman D-band frequency is strongly localized in vacancy defected and large curved CNTs. Our findings will be helpful in explaining the thermal conductivity, specific heat capacity, and Raman spectra in vacancy type disordered CNTs, as well as electron transport properties of CNT-based nanoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85040940666&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85040940666&partnerID=8YFLogxK
U2 - 10.7567/JJAP.57.02CB08
DO - 10.7567/JJAP.57.02CB08
M3 - Article
AN - SCOPUS:85040940666
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
M1 - 02CB08
ER -