van der Waals Contact Engineering of Graphene Field-Effect Transistors for Large-Area Flexible Electronics

Fengyuan Liu, William Taube Navaraj, Nivasan Yogeswaran, Duncan H. Gregory, Ravinder Dahiya

研究成果: Contribution to journalArticle査読

28 被引用数 (Scopus)

抄録

Graphene has great potential for high-performance flexible electronics. Although studied for more than a decade, contacting graphene efficiently, especially for large-area, flexible electronics, is still a challenge. Here, by engineering the graphene-metal van der Waals (vdW) contact, we demonstrate that ultralow contact resistance is achievable via a bottom-contact strategy incorporating a simple transfer process without any harsh thermal treatment (>150 °C). The majority of the fabricated devices show contact resistances below 200 I μm with values as low as 65 I μm achievable. This is on par with the state-of-the-art top- A nd edge-contacted graphene field-effect transistors. Further, our study reveals that these contacts, despite the presumed weak nature of the vdW interaction, are stable under various bending conditions, thus guaranteeing compatibility with flexible electronics with improved performance. This work illustrates the potential of the previously underestimated vdW contact approach for large-area flexible electronics.

本文言語英語
ページ(範囲)3257-3268
ページ数12
ジャーナルACS nano
13
3
DOI
出版ステータス出版済み - 3 26 2019

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

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