TY - JOUR
T1 - Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis
AU - Kawahara, Hisatsugu
AU - Okamoto, Yoichi
AU - Tahira, Kenichiro
AU - Morimoto, Jun
AU - Miyakawa, Toru
AU - Nakashima, Hiroshi
PY - 1992/1
Y1 - 1992/1
N2 - Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.
AB - Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.
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U2 - 10.1143/JJAP.31.87
DO - 10.1143/JJAP.31.87
M3 - Article
AN - SCOPUS:0343251037
VL - 31
SP - 87
EP - 88
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 R
ER -