Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 被引用数 (Scopus)

抄録

The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.

本文言語英語
ホスト出版物のタイトル2018 48th European Solid-State Device Research Conference, ESSDERC 2018
出版社Editions Frontieres
ページ26-29
ページ数4
ISBN(電子版)9781538654019
DOI
出版ステータス出版済み - 10 8 2018
イベント48th European Solid-State Device Research Conference, ESSDERC 2018 - Dresden, ドイツ
継続期間: 9 3 20189 6 2018

出版物シリーズ

名前European Solid-State Device Research Conference
2018-September
ISSN(印刷版)1930-8876

その他

その他48th European Solid-State Device Research Conference, ESSDERC 2018
国/地域ドイツ
CityDresden
Period9/3/189/6/18

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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