Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.

元の言語英語
ホスト出版物のタイトル2018 48th European Solid-State Device Research Conference, ESSDERC 2018
出版者Editions Frontieres
ページ26-29
ページ数4
ISBN(電子版)9781538654019
DOI
出版物ステータス出版済み - 10 8 2018
イベント48th European Solid-State Device Research Conference, ESSDERC 2018 - Dresden, ドイツ
継続期間: 9 3 20189 6 2018

出版物シリーズ

名前European Solid-State Device Research Conference
2018-September
ISSN(印刷物)1930-8876

その他

その他48th European Solid-State Device Research Conference, ESSDERC 2018
ドイツ
Dresden
期間9/3/189/6/18

Fingerprint

Electron injection
Insulated gate bipolar transistors (IGBT)
Ladders
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

これを引用

Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., ... Lwai, H. (2018). Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. : 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 (pp. 26-29). [8486870] (European Solid-State Device Research Conference; 巻数 2018-September). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2018.8486870

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. / Hoshii, T.; Furukawa, K.; Kakushima, K.; Watanabe, M.; Shigvo, N.; Saraya, T.; Takakura, T.; Ltou, K.; Fukui, M.; Suzuki, S.; Takeuchi, K.; Muneta, I.; Wakabayashi, H.; Nishizawa, Shinichi; Tsutsui, K.; Hiramoto, T.; Ohashi, H.; Lwai, H.

2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, 2018. p. 26-29 8486870 (European Solid-State Device Research Conference; 巻 2018-September).

研究成果: 著書/レポートタイプへの貢献会議での発言

Hoshii, T, Furukawa, K, Kakushima, K, Watanabe, M, Shigvo, N, Saraya, T, Takakura, T, Ltou, K, Fukui, M, Suzuki, S, Takeuchi, K, Muneta, I, Wakabayashi, H, Nishizawa, S, Tsutsui, K, Hiramoto, T, Ohashi, H & Lwai, H 2018, Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. : 2018 48th European Solid-State Device Research Conference, ESSDERC 2018., 8486870, European Solid-State Device Research Conference, 巻. 2018-September, Editions Frontieres, pp. 26-29, 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, ドイツ, 9/3/18. https://doi.org/10.1109/ESSDERC.2018.8486870
Hoshii T, Furukawa K, Kakushima K, Watanabe M, Shigvo N, Saraya T その他. Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. : 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres. 2018. p. 26-29. 8486870. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2018.8486870
Hoshii, T. ; Furukawa, K. ; Kakushima, K. ; Watanabe, M. ; Shigvo, N. ; Saraya, T. ; Takakura, T. ; Ltou, K. ; Fukui, M. ; Suzuki, S. ; Takeuchi, K. ; Muneta, I. ; Wakabayashi, H. ; Nishizawa, Shinichi ; Tsutsui, K. ; Hiramoto, T. ; Ohashi, H. ; Lwai, H. / Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, 2018. pp. 26-29 (European Solid-State Device Research Conference).
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