Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)

抜粋

We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.

元の言語英語
ホスト出版物のタイトル2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
出版物ステータス出版済み - 12 1 2008
外部発表Yes
イベント23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, 米国
継続期間: 4 14 20084 17 2008

出版物シリーズ

名前2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

会議

会議23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
米国
Chicago, IL
期間4/14/084/17/08

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Fujimoto, H., Saito, W., Yoshioka, A., Nitta, T., Kakiuchi, Y., & Saito, Y. (2008). Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. : 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).