Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Takayuki Sugino, Kenta Moto, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

本文言語英語
ホスト出版物のタイトル17th International Workshop on Junction Technology, IWJT 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ19-20
ページ数2
ISBN(電子版)9784863486263
DOI
出版ステータス出版済み - 6 30 2017
イベント17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, 日本
継続期間: 6 1 20176 2 2017

出版物シリーズ

名前17th International Workshop on Junction Technology, IWJT 2017

その他

その他17th International Workshop on Junction Technology, IWJT 2017
国/地域日本
CityKyoto
Period6/1/176/2/17

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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