Well developed deformation in Si42

S. Takeuchi, M. Matsushita, N. Aoi, P. Doornenbal, K. Li, T. Motobayashi, H. Scheit, D. Steppenbeck, H. Wang, H. Baba, D. Bazin, L. Càceres, H. Crawford, P. Fallon, R. Gernhäuser, J. Gibelin, S. Go, S. Grévy, C. Hinke, C. R. HoffmanR. Hughes, E. Ideguchi, D. Jenkins, N. Kobayashi, Y. Kondo, R. Krücken, T. Le Bleis, J. Lee, G. Lee, A. Matta, S. Michimasa, T. Nakamura, S. Ota, M. Petri, T. Sako, H. Sakurai, S. Shimoura, K. Steiger, K. Takahashi, M. Takechi, Y. Togano, R. Winkler, K. Yoneda

研究成果: Contribution to journalArticle査読

84 被引用数 (Scopus)

抄録

Excited states in Si38,40,42 nuclei have been studied via in-beam γ-ray spectroscopy with multinucleon removal reactions. Intense radioactive beams of S40 and S44 provided at the new facility of the RIKEN Radioactive Isotope Beam Factory enabled γ-γ coincidence measurements. A prominent γ line observed with an energy of 742(8) keV in Si42 confirms the 2 + state reported in an earlier study. Among the γ lines observed in coincidence with the 2 +→0 + transition, the most probable candidate for the transition from the yrast 4 + state was identified, leading to a 41+ energy of 2173(14) keV. The energy ratio of 2.93(5) between the 21+ and 41+ states indicates well-developed deformation in Si42 at N=28 and Z=14. Also for Si38,40 energy ratios with values of 2.09(5) and 2.56(5) were obtained. Together with the ratio for Si42, the results show a rapid deformation development of Si isotopes from N=24 to N=28.

本文言語英語
論文番号182501
ジャーナルPhysical review letters
109
18
DOI
出版ステータス出版済み - 11 2 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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