Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, H. Nakashima

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.

本文言語英語
論文番号114011
ジャーナルSemiconductor Science and Technology
33
11
DOI
出版ステータス出版済み - 10 17 2018

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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