単結晶Siにおける加工硬化挙動

鈴木 飛翔, 森川 龍哉, 田中 將己, 藤瀬 淳, 小野 敏昭

    研究成果: Contribution to journalArticle

    抄録

    <p>CZ silicon single crystals were deformed in tensile tests along the [1̅34] direction at between 1173 K and 1373. Yield point phenomenon were observed deformed at below 1273 K while continues yield was observed deformed at above 1323 K. Work-hardening rates in stage II were consistent with those reported in other fcc crystals. The onset of stage II was found to have been active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. It supports Takamura's theory that the formation of kink bands contributes to the onset of stage II.</p>
    寄稿の翻訳タイトルWork-hardening in Si single crystals
    本文言語日本語
    ページ(範囲)OS0706
    ジャーナルM&M材料力学カンファレンス
    2019
    0
    DOI
    出版ステータス出版済み - 2019

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