X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, Satoshi Mohri, Tsuyoshi Yoshitake

    研究成果: Contribution to journalConference article査読

    4 被引用数 (Scopus)

    抄録

    Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

    本文言語英語
    論文番号012017
    ジャーナルIOP Conference Series: Materials Science and Engineering
    24
    1
    DOI
    出版ステータス出版済み - 2011
    イベント2010 Summer Workshop on Buried Interface Science with X-Rays and Neutrons - Nagoya, 日本
    継続期間: 7 25 20107 27 2010

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)

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