X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition

Kazushi Sumitani; Ryota Ohtani; Tomohiro Yoshida; Satoshi Mohri; Tsuyoshi Yoshitake

doi:10.1088/1757-899X/24/1/012017

X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, Satoshi Mohri, Tsuyoshi Yoshitake

研究成果: Contribution to journal › Conference article › 査読

4 被引用数 (Scopus)

抄録

Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al₂O ₃(0001)[112̄0].

本文言語	英語
論文番号	012017
ジャーナル	IOP Conference Series: Materials Science and Engineering
巻	24
号	1
DOI	https://doi.org/10.1088/1757-899X/24/1/012017
出版ステータス	出版済み - 2011
イベント	2010 Summer Workshop on Buried Interface Science with X-Rays and Neutrons - Nagoya, 日本継続期間: 7 25 2010 → 7 27 2010

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)

文献へのアクセス

10.1088/1757-899X/24/1/012017

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引用スタイル

X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition. / Sumitani, Kazushi; Ohtani, Ryota; Yoshida, Tomohiro; Mohri, Satoshi; Yoshitake, Tsuyoshi.

In: IOP Conference Series: Materials Science and Engineering, Vol. 24, No. 1, 012017, 2011.

研究成果: Contribution to journal › Conference article › 査読

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abstract = "Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 1{\=1}1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[1{\=2}1]//Al2O 3(0001)[11{\=2}0].",

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AU - Mohri, Satoshi

AU - Yoshitake, Tsuyoshi

PY - 2011

Y1 - 2011

N2 - Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

AB - Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

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