X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching

Kazuma Takeuchi, Yuichiro Ezoe, Kumi Ishikawa, Kasumi Nakamura, Masaki Numazawa, Masaru Terada, Maiko Fujitani, Daiki Ishi, Yusuke Noda, Takaya Ohashi, Kohei Morishita, Kazuo Nakajima, Kazuhisa Mitsuda

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20μm and a depth of 300μm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 + 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 + 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties.

本文言語英語
論文番号06GN04
ジャーナルJapanese journal of applied physics
56
6
DOI
出版ステータス出版済み - 6 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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