X-ray topographic study of SiC crystal at high temperature

H. Yamaguchi, N. Oyanagi, T. Kato, Y. Takano, Shinichi Nishizawa, W. Bahng, S. Yoshida, K. Arai

研究成果: Contribution to journalConference article査読

抄録

We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.

本文言語英語
ジャーナルMaterials Science Forum
338
出版ステータス出版済み - 1 1 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10 10 199910 15 1999

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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