X-ray topographic study of SiC crystal at high temperature

H. Yamaguchi; N. Oyanagi; T. Kato; Y. Takano; Shinichi Nishizawa; W. Bahng; S. Yoshida; K. Arai

X-ray topographic study of SiC crystal at high temperature

H. Yamaguchi, N. Oyanagi, T. Kato, Y. Takano, Shinichi Nishizawa, W. Bahng, S. Yoshida, K. Arai

研究成果: Contribution to journal › Conference article › 査読

抄録

We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.

本文言語	英語
ジャーナル	Materials Science Forum
巻	338
出版ステータス	出版済み - 1 1 2000
外部発表	はい
イベント	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA 継続期間: 10 10 1999 → 10 15 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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引用スタイル

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title = "X-ray topographic study of SiC crystal at high temperature",

abstract = "We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.",

author = "H. Yamaguchi and N. Oyanagi and T. Kato and Y. Takano and Shinichi Nishizawa and W. Bahng and S. Yoshida and K. Arai",

year = "2000",

month = jan,

day = "1",

language = "English",

volume = "338",

journal = "Materials Science Forum",

issn = "0255-5476",

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note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - X-ray topographic study of SiC crystal at high temperature

AU - Yamaguchi, H.

AU - Oyanagi, N.

AU - Kato, T.

AU - Takano, Y.

AU - Nishizawa, Shinichi

AU - Bahng, W.

AU - Yoshida, S.

AU - Arai, K.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.

AB - We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.

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M3 - Conference article

AN - SCOPUS:0033703576

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -