XRD and TEM studies of as-grown MgB2 thin films deposited on r- and c-plane sapphire substrates

A. Saito, H. Shimakage, A. Kawakami, Z. Wang, K. Kuroda, H. Abe, M. Naito, W. J. Moon, K. Kaneko, M. Mukaida, S. Ohshima

    研究成果: Contribution to journalArticle査読

    8 被引用数 (Scopus)

    抄録

    As-grown MgB2 thin films were deposited on r-plane (112) and c-plane (001) sapphire substrates by using a carrousel-type magnetron sputtering system. Even though the respective critical temperature and residual-resistivity ratio of the MgB2 films deposited on r- and c-plane sapphire substrates were nearly the same in both cases, the resistivity of the films on the c-plane sapphire substrates, ρ(40 K) about 50 μΩcm, were lower than that on the r-plane sapphire substrates, ρ(40 K) about 300 μΩcm. Standard θ/2θ X-ray diffraction measurements showed that the MgB2 thin films deposited on the c-plane sapphire substrates have c-axis orientation. Cross-sectional transmission electron microscope images showed that the MgB2 thin films deposited on both the r- and c-plane sapphire substrates contain columnar structures. According to the results of selected-area electron-diffraction patterns, the films deposited on the c-plane sapphire substrates had c-axis orientation and the films on the r-plane sapphire substrates including the amorphous MgB 2 also had c-axis orientation. These results indicate that selection of the cut-plane of the sapphire substrates is very important to grow the high-quality as-grown MgB2 thin films.

    本文言語英語
    ページ(範囲)1366-1370
    ページ数5
    ジャーナルPhysica C: Superconductivity and its applications
    412-414
    SPEC. ISS.
    DOI
    出版ステータス出版済み - 10 2004

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • エネルギー工学および電力技術
    • 電子工学および電気工学

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