Zincblende and wurtzite phases in InN epilayers and their respective band transitions

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, C. Kisielowski

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed areas was recorded simultaneously to exclude a contribution from oxides and/or metal clusters or extended defects such as grain boundaries. At room temperature a band transition for wurtzite InN was found at (1.7±0.2)eV and for zincblende InN at (1.4±0.2) eV that are ascribed to the fundamental bandgaps of the respective polytypes. Those values correlate well with recent results of various research groups measuring the bandgap in InGaN alloys with VEELS.

本文言語英語
ページ(範囲)225-229
ページ数5
ジャーナルJournal of Crystal Growth
288
2
DOI
出版ステータス出版済み - 3 1 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Zincblende and wurtzite phases in InN epilayers and their respective band transitions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル