Zn - In - O based thin-film transistors: Compositional dependence

N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, H. Hosono

研究成果: Contribution to journalArticle査読

63 被引用数 (Scopus)

抄録

The compositional dependence of sputter-deposited Zn - In - O (ZIO) film properties and the TFT performance were studied by means of a combinatorial technique. Both the characteristics of ZIO-TFTs and the ZIO film properdes are very sensitive to the Zn : In ratio. The best TFT performances are obtained at Zn:In ∼60:40 at%, where the saturation mobility (μ sat), subthreshold swing (S.S.), on-off current ratio (I on/I off), and threshold voltage (V th) are 26.5 cm 2/V s, 0.24 V/dec., 10 10, and +2 V, respectively. The TFT characteristics peak at this compositional ratio. Specifically, μ sat, I on/I off and V th reach maximum, while S.S. reaches minimum at this ratio. The air stability of ZIQ-TFTs was also examined for active channel layers with different Zn:In ratios, which clarified that the TFTs with high stability are obtained around the same composition ratio where the best characteristics are obtained. It was confirmed by X-ray diffraction and transmission electron microscopy that the ZIO films with this composition ratio have amorphous structure.

本文言語英語
ページ(範囲)1915-1919
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
205
8
DOI
出版ステータス出版済み - 8 1 2008
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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