TY - JOUR
T1 - Zn - In - O based thin-film transistors
T2 - Compositional dependence
AU - Itagaki, N.
AU - Iwasaki, T.
AU - Kumomi, H.
AU - Den, T.
AU - Nomura, K.
AU - Kamiya, T.
AU - Hosono, H.
PY - 2008/8/1
Y1 - 2008/8/1
N2 - The compositional dependence of sputter-deposited Zn - In - O (ZIO) film properties and the TFT performance were studied by means of a combinatorial technique. Both the characteristics of ZIO-TFTs and the ZIO film properdes are very sensitive to the Zn : In ratio. The best TFT performances are obtained at Zn:In ∼60:40 at%, where the saturation mobility (μ sat), subthreshold swing (S.S.), on-off current ratio (I on/I off), and threshold voltage (V th) are 26.5 cm 2/V s, 0.24 V/dec., 10 10, and +2 V, respectively. The TFT characteristics peak at this compositional ratio. Specifically, μ sat, I on/I off and V th reach maximum, while S.S. reaches minimum at this ratio. The air stability of ZIQ-TFTs was also examined for active channel layers with different Zn:In ratios, which clarified that the TFTs with high stability are obtained around the same composition ratio where the best characteristics are obtained. It was confirmed by X-ray diffraction and transmission electron microscopy that the ZIO films with this composition ratio have amorphous structure.
AB - The compositional dependence of sputter-deposited Zn - In - O (ZIO) film properties and the TFT performance were studied by means of a combinatorial technique. Both the characteristics of ZIO-TFTs and the ZIO film properdes are very sensitive to the Zn : In ratio. The best TFT performances are obtained at Zn:In ∼60:40 at%, where the saturation mobility (μ sat), subthreshold swing (S.S.), on-off current ratio (I on/I off), and threshold voltage (V th) are 26.5 cm 2/V s, 0.24 V/dec., 10 10, and +2 V, respectively. The TFT characteristics peak at this compositional ratio. Specifically, μ sat, I on/I off and V th reach maximum, while S.S. reaches minimum at this ratio. The air stability of ZIQ-TFTs was also examined for active channel layers with different Zn:In ratios, which clarified that the TFTs with high stability are obtained around the same composition ratio where the best characteristics are obtained. It was confirmed by X-ray diffraction and transmission electron microscopy that the ZIO films with this composition ratio have amorphous structure.
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U2 - 10.1002/pssa.200778909
DO - 10.1002/pssa.200778909
M3 - Article
AN - SCOPUS:54249125012
VL - 205
SP - 1915
EP - 1919
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 8
ER -