Zn-induced impurity levels in layer semiconductor InSe

S. Shigetomi, H. Ohkubo, T. Ikari, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    22 被引用数 (Scopus)

    抄録

    The impurity levels in Zn-doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.

    本文言語英語
    ページ(範囲)3647-3650
    ページ数4
    ジャーナルJournal of Applied Physics
    66
    8
    DOI
    出版ステータス出版済み - 12 1 1989

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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