ZnO-based semiconductors with tunable band gap for solar sell applications

Naho Itagaki, K. Matsushima, D. Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

In this study, we discuss the potential advantages of a new ZnO-based semiconductor, ZnInON (ZION), for application in multi quantum-well (MQW) photovoltaics. ZION is a pseudo-binary alloy of ZnO and InN, which has direct and tunable band gaps over the entire visible spectrum. It was found from simulation results that owing to the large piezoelectric constant, the spatial overlap of the electron and hole wave functions in the QWs is significantly small on the order of 10-2, where the strong piezoelectric field enhances the separation of photo generated carriers. As a result, ZION QWs have low carrier recombination rate of 1014-1018 cm-3s-1, which is much lower than that in conventional QWs such as InGaAs/GaAs QW (1019 cm-3s-1) and InGaN/GaN QW (1018-1018 cm-3s-1). The long carrier life time in ZION QWs (ə1/41μs) should enable the extraction of photo-generated carriers from well layers before the recombination, and thus increase Voc and Jsc. These simulation results are consistent with our experimental data showing that both Voc and Jsc of a p-i-n solar cell with strained ZION MQWs and thus the efficiency were increased by the superimposition of laser light with lower photon energy than the band gap energy of the QWs. Since the laser light contributed not to carrier generation but to the carrier extraction from the QWs, and no increase in Voc and Jsc was observed for relaxed ZION MQWs, the improvement in the efficiency was attributed to the long carrier lifetime in the strained ZION QWs.

元の言語英語
ホスト出版物のタイトルOxide-Based Materials and Devices VI
編集者Ferechteh H. Teherani, David C. Look, David J. Rogers
出版者SPIE
9364
ISBN(電子版)9781628414547
DOI
出版物ステータス出版済み - 1 1 2015
イベントOxide-Based Materials and Devices VI - San Francisco, 米国
継続期間: 2 8 20152 11 2015

その他

その他Oxide-Based Materials and Devices VI
米国
San Francisco
期間2/8/152/11/15

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Carrier lifetime
Band Gap
Semiconductors
Energy gap
Semiconductor materials
Recombination
Lasers
Binary alloys
Wave functions
Semiconductor quantum wells
Laser
InGaN
Binary Alloys
Solar cells
carrier lifetime
InGaAs
Photons
Quantum Well
Solar Cells
Gallium Arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Itagaki, N., Matsushima, K., Yamashita, D., Seo, H., Koga, K., & Shiratani, M. (2015). ZnO-based semiconductors with tunable band gap for solar sell applications. : F. H. Teherani, D. C. Look, & D. J. Rogers (版), Oxide-Based Materials and Devices VI (巻 9364). [93640P] SPIE. https://doi.org/10.1117/12.2078114

ZnO-based semiconductors with tunable band gap for solar sell applications. / Itagaki, Naho; Matsushima, K.; Yamashita, D.; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu.

Oxide-Based Materials and Devices VI. 版 / Ferechteh H. Teherani; David C. Look; David J. Rogers. 巻 9364 SPIE, 2015. 93640P.

研究成果: 著書/レポートタイプへの貢献会議での発言

Itagaki, N, Matsushima, K, Yamashita, D, Seo, H, Koga, K & Shiratani, M 2015, ZnO-based semiconductors with tunable band gap for solar sell applications. : FH Teherani, DC Look & DJ Rogers (版), Oxide-Based Materials and Devices VI. 巻. 9364, 93640P, SPIE, Oxide-Based Materials and Devices VI, San Francisco, 米国, 2/8/15. https://doi.org/10.1117/12.2078114
Itagaki N, Matsushima K, Yamashita D, Seo H, Koga K, Shiratani M. ZnO-based semiconductors with tunable band gap for solar sell applications. : Teherani FH, Look DC, Rogers DJ, 編集者, Oxide-Based Materials and Devices VI. 巻 9364. SPIE. 2015. 93640P https://doi.org/10.1117/12.2078114
Itagaki, Naho ; Matsushima, K. ; Yamashita, D. ; Seo, Hyunwoong ; Koga, Kazunori ; Shiratani, Masaharu. / ZnO-based semiconductors with tunable band gap for solar sell applications. Oxide-Based Materials and Devices VI. 編集者 / Ferechteh H. Teherani ; David C. Look ; David J. Rogers. 巻 9364 SPIE, 2015.
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