ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells

Hee Je Kim, Jin Ho Bae, Hyunwoong Seo, Masaharu Shiratani, Chandu Venkata Veera Muralee Gopi

研究成果: ジャーナルへの寄稿記事

抜粋

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

元の言語英語
記事番号1931
ジャーナルEnergies
11
発行部数8
DOI
出版物ステータス出版済み - 8 2018

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Control and Optimization
  • Electrical and Electronic Engineering

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