A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a simple design method using zoomed RS. Five parameters were automatically designed, taking account to process margin with simulation number of 130 only.
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